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| Semiconductor STD129 NPN Silicon Transistor Description * Extremely low collector-to-emitter saturation voltage ( VC E ( S A T )=0.2V Typ. @IC /IB =3A/150mA) * Suitable for low voltage large current drivers * Switching Application Ordering Information Type NO. STD129 Marking STD129 Package Code TO-92 Outline Dimensions 3.450.1 4.50.1 2.250.1 unit : mm 4.50.1 0.40.02 2.060.1 14.00.40 1.27 Typ. 2.54 Typ. 123 1.200.1 PIN Connections 1. Emitter 2. Collector 3. Base 0.38 KST-9060-001 1 STD129 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VC B O VC E O VE B O IC PC Tj T stg Ratings 40 15 7 5 625 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) fT C ob Test Condition IC =50A, IE=0 IC =1mA, IB=0 IE=50A, IC =0 VCB=30V, IE=0 VEB=5V, IC =0 VCE=2V, IC =0.5A VCE=2V, IC =3A IC =3A, IB=150mA VCE=6V, IE=-50mA VCB=20V, IE=0, f=1MHz Min. 40 15 7 160 40 - Typ. 150 - Max. 0.1 0.1 320 0.3 50 Unit V V V A A V MHz pF KST-9060-001 2 STD129 Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 hFE - IC Fig. 3 VCE(sat) - IC Fig. 4 fT - IC Fig. 5 Cob - VCB KST-9060-001 3 |
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